5 SIMPLE TECHNIQUES FOR GERMANIUM

5 Simple Techniques For Germanium

s is usually that in the substrate product. The lattice mismatch contributes to a large buildup of strain Electrical power in Ge layers epitaxially grown on Si. This pressure energy is principally relieved by two mechanisms: (i) generation of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of both of those

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